ISSN:
1432-0630
Schlagwort(e):
61.80
;
85.30
;
71.20
Quelle:
Springer Online Journal Archives 1860-2000
Thema:
Maschinenbau
,
Physik
Notizen:
Abstract Deep-level transient spectroscopy has been used to investigate the defects remaining in ion implantedp-n junctions in silicon after various pulsed annealing techniques, including ruby and YAG lasers as well as pulsed electron beams (PEBA). The nature and distribution of the various identified levels are discussed for each procedure as a function of various experimental parameters.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1007/BF00624720
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