Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
60 (1992), S. 880-882
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We model time-resolved photoluminescence in GaAs using an ensemble Monte Carlo method coupled with a k⋅p calculation of the band structure. We show that on a picosecond scale, carrier diffusion perpendicular to the layer significantly reduces the density at the surface and consequently has a first-order effect on luminescence measurements. To illustrate this we compare the calculated luminescence, with and without diffusion, to experimental data.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.106492
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