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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 19 (1979), S. 307-312 
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A new method for the defect-level analysis of extrinsic semiconductors is described. Provided that the defect-level concentration is not too large and the temperature is not too low, the Fermi levelE F is shifted with increasing temperature from a position near the conduction (or valence) band towards the middle of the forbidden gap monotonously. Thus majority carriers are emitted into the conduction (or valence) band from the defect levels successively. If for a small increment of the temperature the Fermi levelE F is shifted by ΔE F and the concentration of free majority carriers is increased by Δn, then the ratio Δn/ΔE F is a measure of the defect-level concentration within ΔE F . Furthermore we discuss how this analysis is influenced by additional defect levels outside the range over which the Fermi energy can be shifted by variation of the temperature.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 18 (1979), S. 427-429 
    ISSN: 1432-0630
    Keywords: 71.20 ; 71.55 ; 72.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The distribution of the localized levelsg(ε) in the forbidden gap of amorphous silicon is calculated from the dependence of the Fermi energy on the doping concentration of phosphorus donors and boron acceptors. The minimum ofg(ε) is verified by this method to be in the order of 1017 to 1018 cm−3eV−1, whereas the maxima ofg(ε), which have been reported in the literature, are not confirmed.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Chichester : Wiley-Blackwell
    Biological Mass Spectrometry 11 (1976), S. 1077-1080 
    ISSN: 0030-493X
    Keywords: Chemistry ; Analytical Chemistry and Spectroscopy
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: The relative importance of the rearrangement ions [M — Br — CO]+, [M — Br2 — CO]+ and [M — HBr2 — CO]+ in the mass spectra of the title compounds is compared with the amounts of α-methoxyketone formed on reduction of these compounds with a Zn/Cu couple in methanol. It is suggested that the quantitative correlation found reflects the electron releasing powers of the substituents on the α carbons.
    Additional Material: 1 Tab.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    New York, NY : Wiley-Blackwell
    Journal für Praktische Chemie/Chemiker-Zeitung 318 (1976), S. 671-680 
    ISSN: 0021-8383
    Keywords: Chemistry ; Organic Chemistry
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Description / Table of Contents: 1,2,3-Triazabutadienes. IV. MO Calculations of Photochromic TriazenesThe π-π* electronic transitions of different cis-trans isomers of substituted 1-aryl-3-(3-methyl-benzthiazolin-2-ylidene)-triazenes and of 1-(p-chlorophenyl)-3-(1,3-dimethylbenzimidazolin-2-ylidene)-triazene have been calculated by the PPP-method. The observed spectral characteristics can be described satisfactorily on the basis of a cis-trans isomerism around the N=N double bond. The Differences of the excitation energies between the cis and the trans form thus calculated render the experimental values with a deviation of ≤0.06 eV. The influence of the substituents on the energy of the S0 - S1 transitions has also been calculated and agrees in its tendency with the experimental results.
    Notes: Mit dem PPP-Verfahren werden die π-π*-Elektronenübergänge von verschiedenen cis-trans-Isomeren substituierter 1-Aryl-3-[3-methyl-benzthiazolinyliden-(2)]-triazene 1 und vom 1-(p-Chlorphenyl)-3-[1,3-dimethylbenzimidazoliyliden-(2)]-triazen 2 berechnet. Die beobachteten spektralen Eigenschaften dieser Verbindungen lassen sich befriedigend beschreiben, wenn eine cis-trans-Isomerie um die N=N-Doppelbindung zugrunde gelegt wird. Die so berechneten Anregungsdifferenzen zwischen cis- und trans-Form geben die expermentellen Werte mit einer Abweichung von ≤0,06 eV wieder. Der Substituenteneinfluß auf die Lage der S0 - S1-Übergänge wird ebenfalls in der Tendenz richtig dargestellt.
    Additional Material: 4 Ill.
    Type of Medium: Electronic Resource
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