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  • 1975-1979  (3)
  • 1
    Electronic Resource
    Electronic Resource
    High resistivity layers of GaAs grown by liquid phase epitaxy (1975)
    Springer
    Applied physics 7 (1975), S. 195-201 
    Details
    ISSN: 1432-0630
    Keywords: GaAs ; Liquid phase epitaxy ; High resistivity layers
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The preparation of high-resistivity undoped GaAs layers is described. The layers were epitaxially grown from the liquid phase on semi-insulating GaAs substrates. Up to 106 Ωcm in resistivity were obtained. The layers are highly compensated. Their temperature behaviour resembles that of Cr-doped semi-insulating bulk material. Additionally it is reported on the doping effect of Cr, Fe, Co, and Ni in the liquid phase epitaxy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00936024
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Incorporation of Sn into epitaxial GaAs grown from the liquid phase (1978)
    Springer
    Applied physics 17 (1978), S. 63-72 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.+b ; 72.80.Ey ; 72.20.Fr
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The incorporation of Sn into LPE GaAs was studied as a function of the atomic fractionx Sn l of Sn in the liquid (1.6×10−4≤x Sn l ≤0.54), the growth temperatureT K and the cooling rate α. The diffusion coefficient of As in Ga for moderate Sn-doping was deduced from the growth velocities to beD As (760° C)=(3.3±1.0)×10−5 cm2/s. The epitaxial layers were analyzed after van der Pauw with special emphasis on the sources of experimental error. With the aid of current mobility theories the concentrations of the ionized donors and acceptors were derived. From their dependence onx Sn l , on α and onT K combined with the Schottky-barrier model of Sn incorporation it can be concluded that the melt and the growing crystal surface were in thermal equilibrium. The diffusion coefficient of Sn in GaAs is about 8×10−14 cm2/s at 760° C. The distribution coefficient for Sn increases from 4.4×10−5 to 12.3×10−5 in the temperature range from 690 to 800° C. The total Sn incorporationx Sn s was measured using the atomic absorption spectroscopy for the first time down tox Sn s =1017/cm3. From these data it can be concluded that up tox Sn l =0.54 the dopant Sn is incorporated as donor and as acceptor only and that within the experimental scatter there is no indication of incorporation as a neutral species.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885032
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Impurity conduction and magnetoresistance in lightly dopedn-type GaAs (1976)
    Springer
    The European physical journal 24 (1976), S. 361-365 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Measurements of the resistivity and magnetoresistance of epitaxially grownn-type GaAs (N D ~ 1–2 × 1015 cm−3) at 4.2 K and below are reported. The hopping resistivityρ 3 depends onN D according toρ 3=ρ 0 exp (1.88/N D 1/3 a) in agreement with predictions of percolation theory, wherea is the Bohr radius of the impurity ground state. The experimentally obtained preexponential factorρ 0 is very close to a recent theoretical prediction, which was derived from the computation of the topology of an infinite cluster. In magnetic fields below 1.3T the resistivity is found to be proportional to exp $$\left( {\frac{{ta}}{{\lambda ^4 N_D }}} \right)$$ ,t having a value of 0.06 in disagreement with a recent theoretical calculation oft=0.04. In the high magnetic field region above 3T the data are described byρ ∝ exp [q (λ 2 a B N D)−1/2], whereλ is the characteristic magnetic length anda B is the magnetic field dependent Bohr radius. From the experiments a value ofq=0.68 is deduced, while the theory predictsq=0.98.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01351525
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    Paper (German National Licenses)
    Fulltext
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