ISSN:
1432-0630
Keywords:
Positron lifetime
;
Semiconductor dislocation
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Positron lifetime measurements have been performed inn-type andp-type germanium single crystals deformed by compression. The results are compared with those of deformed GaAs single crystals obtained by the authors previously. In bothn andp-type germanium the lifetime τ1 and its intensityI 1 decreased with deformation. Using the trapping model, the trapping rates of positrons by dislocations are obtained, which in turn gave the cross width of the dislocation as 20.0 Å and 8.2 Å forn-type andp-type germanium, respectively. In terms of Read's model the fraction of the dangling bonds occupied by electrons is obtained to 0.26 in then-type germanium. This value was smaller than those obtained forn-type GaAs, i.e., 0.46 and 0.50 for Ga- and As-dislocation, respectively. It is found that doping causes the trapping of positrons. Inp-type germanium the fractionf was determined to 0.25 in terms of Schröter and Labusch's model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00884151
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