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  • 1
    Electronic Resource
    Electronic Resource
    Study of excimer laser induced melting and solidification of Si by time-resolved reflectivity measurements (1992)
    Springer
    Applied physics 54 (1992), S. 327-333 
    Details
    ISSN: 1432-0630
    Keywords: 42.20.−y ; 05.70.Fh ; 02.60.Cb
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract In this paper we present the interpretation and analysis of time-resolved reflectivity measurements for excimer laser irradiated silicon. A nonequilibrium melting model is used to calculate the temperature distribution in the sample and the position of the solid-liquid interface. Calculations of the reflectivity of the probe beam are performed to obtain time-resolved reflectivity signals from basic principles, independent of the experiments, which can be compared with experimental data to reveal information about dynamics of the heating and cooling process. We propose more accurate methods for the determination of the melting threshold, the melt front position and the reflectivity of the sample for excimer laser light. From model calculations and experimental data we determine the reflectivity of the solid and liquid silicon for ArF excimer laser light.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324196
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of the reflectivity of liquid semiconductors over a wide temperature range (1995)
    Springer
    International journal of thermophysics 16 (1995), S. 841-849 
    Details
    ISSN: 1572-9567
    Keywords: liquid semiconductors ; melting ; molten materials ; pulsed laser ; reflectivity
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract A new method for the determination of the reflectivity of liquid semiconductors in the temperature range from the melting point to the boiling point is presented in the paper, The method is based on the pulsed laser irradiation of the semiconductor surface. the time-resolved reflectivity (TRR) measurement technique, and the numerical simulation of the process using a nonequilibrium thermal model, Matching the experimental and computed values of the maximum reflectivity of the cw probe laser and the surface melt duration in the dependence on energy density of the laser pulse and a least-squares-based fitting procedure lead to the determination of the reflectivity of the liquid at the wavelength of the primary laser beam, The method is illustrated by experimental data on XeCl (308-nm) and ArF (193-nm) excimer laser irradiation of Si(100 ), giving the results B,=0.67±0.01-(8±I) x10−5 (T-1687) at 308 nm and R,= 0.755 ±0.010 - (7 ± I ) x 10−5( T-1687) at 193 rim, where R, is the reflectivity of the liquid and T is temperature in K,
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01438869
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Application of combined experimental and numerical techniques in determining the temperature dependence of reflectivity of semiconductors (1996)
    Springer
    International journal of thermophysics 17 (1996), S. 527-533 
    Details
    ISSN: 1572-9567
    Keywords: pulsed laser ; reflectivity ; semiconductors ; time-resolved reflectivity technique
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Combined experimental and numerical techniques for determining the temperature dependence of reflectivity of basic semiconductors are analyzed. The method for determination of the reflectivity dependence of liquid semiconductors under pulsed laser irradiation on temperature developed earlier by the authors is modified for the case of solid semiconductors. The results obtained by the time-resolved reflectivity measurement technique together with the known temperature dependencies of the refraction index and the extinction coefficient for the cw probe laser and the room-temperature data for the reflectivity at the frequency of the primary pulsed laser beam are the input parameters of this method. The method itself consists in matching the experimental and computed values of the maximum reflectivity of cw probe laser in dependence on the energy density of the laser pulse and a least-squares fitting procedure. The method is verified on experimental data for the XeCl excimer laser irradiation of Si( 100), givingR s=0.590±0.005+(4.5±0.5)× 10−5(T−293) for the reflectivity of crystalline silicon, which is in good agreement with experimental measurements done by other investigators. In addition, numerical test and error analyses of both the method presented here and the previous method proposed for liquid semiconductors are described and the accuracy and error limits of both methods are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01443409
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    Paper (German National Licenses)
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