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  • 29.70.Gn  (1)
  • 61.16  (1)
  • 73  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Field-ion imaging of a tungsten supertip (1995)
    Springer
    Applied physics 61 (1995), S. 99-100 
    Details
    ISSN: 1432-0630
    Keywords: 61.16 ; 68.35
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract For the first time, a supertip on a〈111〉W base tip has been self-imaged by field-ion microscopy with atomic resolution. It is a tiny crystalline protrusion of a few nm in diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538219
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    On the insulating properties of the interfacial layer between ion bombarded-amorphous and crystalline silicon (1977)
    Springer
    Applied physics 13 (1977), S. 255-259 
    Details
    ISSN: 1432-0630
    Keywords: 73
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract After bombarding silicon single crystals with heavy neon ion doses, the resulting amorphous surface layer has been found to be electrically insulated from the underlying bulk material. Current-voltage characteristics indicate the formation of a junction between the crystalline and the damaged layer. As a consequence, the electrical properties of the amorphous layer can be measured at low temperatures up to about 230 K and considerably beyond room temperature, if thick crystal wafers and silicon-on-sapphire (SOS) samples, respectively, are used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882889
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic stopping power of Ti in C at Bohr velocities — experiment and theories (1991)
    Springer
    The European physical journal 340 (1991), S. 219-222 
    Details
    ISSN: 1434-601X
    Keywords: 29.70.Gn
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Ranges of Ti ions, implanted into C with reduced velocities between 0.1 〈 ν/ν0 〈 5, ν0=e2/ħ, have been measured by Rutherford backscattering of a particles. By applying the concept of incremental range we have derived the electronic stopping power,S e, with a precision of about 1%; the estimated accuracy is 2%. All theories deviate from the experimental results considerably with respect to both magnitude and velocity dependence of Se.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01303835
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    Paper (German National Licenses)
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