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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 38 (1985), S. 77-95 
    ISSN: 1432-0630
    Keywords: 79.20 Mb ; 61.50 Jr ; 61.80 ki
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The generation and development of surface features by ion bombardment induced sputtering erosion of f.c.c. metals is reviewed. Studies with polycrystalline substrates reveal the plethora of individual features, both etch pits and cones and the repetitive features, such as ripple trains, which form differently on different crystallite surfaces. Studies with well defined single crystals clarify the origins of such features and the relative independence of their habit on ion species and substrate material.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1432-0630
    Keywords: 79.20 ; 34
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The glancing incidence Rutherford backscattering method is used to study the erosion of aluminium films during bombardment by 10 keV Ar+ ions. It is found that the erosion rate of the firm is about one third the value expected and also that the depth profile of previously implanted 80 ke VPb+ ions changes during the erosion.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    International Journal of Numerical Modelling: Electronic Networks, Devices and Fields 3 (1990), S. 137-155 
    ISSN: 0894-3370
    Keywords: Engineering ; Electrical and Electronics Engineering
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology
    Notes: When the erosion or growth of a surface that occurs in semiconductor device processing can be considered as everywhere continuous in space and time, the equations of motion of the surface may be specified and determined numerically using a kinetic model of surface evolution. In this review the fundamental concepts of the kinematic model of surface evolution are discussed. Detailed consideration of the theory of characteristics reveals its limitations which are overcome by recent theoretical development based on the Huygens principle of wavefront reconstruction. Correct interpretation of the nature of the basic wavelet, coupled with contemporary ideas of surface and edge propagation, form the essence of a new numerical algorithm. Numerical analysis and consequent numerical procedures derived from the generalized kinematic model are presented. Examples of surface evolution, with particular reference to ion beam induced erosion are given to show the advantages and potential of the method as opposed to existing models and theoretical prediction.When evolution processes are discontinuous and localized, other approaches, particularly those that use numerical modelling, are required. Such approaches are also reviewed here.
    Additional Material: 10 Ill.
    Type of Medium: Electronic Resource
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