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  • 1
    ISSN: 1432-0533
    Keywords: Key words Focal ; Cortical ; Dysplasia ; Wnt ; Notch
    Source: Springer Online Journal Archives 1860-2000
    Topics: Medicine
    Notes: Abstract Determination of neuroglial cell fate and neural tube development during embryogenesis is influenced by the Notch/Wnt signalling pathway. We have studied the localisation of several proteins in the Wnt pathway in focal cortical dysplasia (FCD). This disorder, thought to be due to abnormalities of neuronal migration and differentiation, contains regions of morphologically normal neocortex interrupted by areas of neuronal laminar disorganisation, heterotopic white matter neurons, abnormal large neurons and balloon cells of uncertain histogenesis. We found that the subcellular distribution of several proteins involved in the Wnt pathway differed in regions of FCD from normal cortex, and that within the areas of FCD, the pattern varied with cellular phenotype. Thus, in balloon cells, elevated cytoplasmic levels of dishevelled (Dvl-1) protein were accompanied by an absence of Notch-1, increased adenomatous poliposis coli (APC), altered cytoplasmic β-catenin, and reduced nuclear expression of β-catenin. A contrasting pattern of expression was found in abnormal large neurons, which demonstrated elevated levels of Notch-1, and glycogen synthase kinase-3β (GSK-3β), and normal levels of APC. Our results are consistent with the notion that Wnt/Notch signalling influences neuroglial cell fate, and suggest that a perturbation of Wnt/Notch signalling may contribute to the neuropathology of FCD.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 21 (1980), S. 199-204 
    ISSN: 1432-0630
    Keywords: 42.60 ; 42.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Coherent infrared radiation tunable between 1.6 and 3.2 μm was generated with a pulsed dye laser by 6s−5d 5/2 stimulated electronic Raman scattering in caesium vapour. We describe a technique using thermal dissociation to reduce the density of caesium dimers in a heat-pipe oven, which produced a factor of 7 reduction in Raman threshold. The threshold displayed a marked dependence on pump bandwidth.
    Type of Medium: Electronic Resource
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