ISSN:
1432-0630
Keywords:
61.70 Tm
;
61.70 Wp
;
61.80 Ih
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The behaviour of ion-implanted arsenic in 〈100〉-oriented silicon single crystals exposed to continuous incoherent light from a xenon arc lamp has been analyzed with sheet resistivity measurements, Rutherford backscattering spectrometry, and ion channeling including angular scans. Redistribution, substitutionality, and electrical activity of arsenic were followed as functions of exposure time (6–20s) and induced temperature (1000°–1100°C). Redistribution was observed for implanted concentrations exceeding ∼4×1020 at.%/cm3. High substitutional fractions, between 95% and 99%, and low sheet resistivities were found for all annealed samples. Formation mechanism of arsenic substitutional solid solutions during transient heating of implanted layers is discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01197086
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