ISSN:
1432-0630
Keywords:
61.70.At
;
66.30.Jt
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The incorporation of deuterium into crystalline silicon, germanium, and gallium arsenide from a plasma source is investigated as a function of sample temperature during the plasma treatment. The total amount of incorporated deuterium and its bonding states are characterized by the thermal effusion (TE) technique for different dopants and doping levels. In all samples investigated, we find a strong influence of the passivation temperature on these quantities; however, there are large differences between different semiconductors and for different doping levels or dopants. The results are discussed in terms of plasma-induced defects, dopant-deuterium complexes, and surface effects.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323434
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