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  • 1
    Electronic Resource
    Electronic Resource
    CMOS 1/f noise: n-channel versus p-channel (1990)
    Springer
    Applied physics 51 (1990), S. 337-339 
    Details
    ISSN: 1432-0630
    Keywords: 73.40Q ; 61.70T
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This note reports on the noise of CMOS devices. It is shown experimentally that a weak boron threshold implant (∼1012 cm−3) can influence the 1/f noise levels. For wafers with threshold adjustment the p-channel noise decreases whilst the n-channel noise increases. The changes in the n/p noise ratio with/without threshold implantation are predicted using a simple model in conjunction with carrier profile simulations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00324315
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