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  • 61.80  (1)
  • 79.40.+z  (1)
  • Metastable superconducting alloys  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Ion implantation a powerful technique for the production of metastable superconducting alloys (1975)
    Springer
    Applied physics 7 (1975), S. 239-248 
    Details
    ISSN: 1432-0630
    Keywords: Ion implantation ; Metastable superconducting alloys
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion implantation at liquid helium temperatures is a new method of producing metastable alloys. The special features of this alloying technique are illustrated by two selected examples of dilute and concentrated alloys, respectively. Superconductors containing small amounts of paramagnetic (3d)-impurities such asHgMn, PbMn andSnMn exhibit strong pair breaking effects. In the case ofSnMn the Kondo effect is observed. Concentrated alloys of Pd and Pd-noble metal alloys with hydrogen (deuterium) are only superconducting in a very high concentration range, being unstable at room temperature. Such concentrations can be achieved by ion implantation at liquid He-temperatures. The superconducting transition temperature can thus be raised to a maximum value of 16.6 K in aH/Pd 0.55 Cu0.45≃0.7 alloy.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00900319
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Evaporation of atoms from femtosecond laser-heated gallium arsenide (1986)
    Springer
    Applied physics 39 (1986), S. 9-11 
    Details
    ISSN: 1432-0630
    Keywords: 79.40.+z ; 65.90.+i ; 64.90.+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The surface temperature of a GaAs crystal irradiated with 150 fs laser pulses is determined from the Maxwell velocity distribution of the evaporated atoms. The crystal is strongly superheated, and melting is observed to occur at a temperature 600–1000 K above the equilibrium melting point.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01177158
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    A search for a thermal spike effect in sputtering (1983)
    Springer
    Applied physics 30 (1983), S. 83-86 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 61.80
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The temperature dependence of the sputtering yield was measured for lOOkeV per atom bombardment of silver with molecular and atomic antimony ions. No exponential increase of the yield was found in the temperature range from 25° to 775 °C, although a pronounced nonlinear effect is observed when the yield of these projectiles is compared,Y(Sb 2 + )≈ 1.5×[2Y(Sb+)]. We conclude that there is no influence of the lattice temperature on collision spikes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00614908
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    Paper (German National Licenses)
    Fulltext
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