ISSN:
1432-0630
Keywords:
PACS: 68.55; 61.10; 81.40.Ef
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract. The growth of epitaxial C60 thin films on mica(0 0 1) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C60 growth is determined by two independent and equivalent C60-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(0 0 1)-substrate surface offers the three-fold fcc-(1 1 1)-oriented C60-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 AÅ/s is responsible for the formation of twins at a substrate temperature of 150° C, which diminishes by a higher substrate temperature of 200° C. By a decrease of the deposition rate down to 0.08 AÅ/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150° C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C60 films starts with a slight fibre texture which does not appear at a larger film thickness.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01538338
Permalink
