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  • 1
    Electronic Resource
    Electronic Resource
    Temperature characteristics of positron trapping at defects in electron-irradiated silicon (1989)
    Springer
    Applied physics 49 (1989), S. 659-664 
    Details
    ISSN: 1432-0630
    Keywords: 61.70 ; 61.80 ; 78.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron-annihilation lifetime and Doppler-broadening measurements are used to investigate defects in silicon irradiated at 373 K with 6 MeV electrons to a dose of 1×l019e/cm2. In the unirradiated silicon sample (p type) a temperature-independent behaviour of the bulk-lifetime is observed in the temperature interval 110–500 K with a constant value of 220±1 ps. The slight effect observed on the S-parameter evolution is explained taking into account the thermal expansion of the lattice. The lifetime results obtained at 80 K and at 300 K after isochronal annealing as well as the behaviour of the intensity of the second lifetime componentI 2 during lifetime measurements below the irradiation temperature in the irradiated silicon sample (n type), clearly indicate the temperature dependent characteristics of the positron trapping cross section σt(T) ∝T n withn= −1.905±0.016. From isochronal annealing results, an annealing stage is observed in which di-vacancies agglomerate into quadri-vacancies. The mean positron lifetime in those quadri-vacancies is 350 ps.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616990
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Positron lifetime measurements inn- andp-type silicon (1974)
    Springer
    Applied physics 4 (1974), S. 271-272 
    Details
    ISSN: 1432-0630
    Keywords: Positron annihilation (sub.: lifetimes) ; Semiconductors (sub.: silicon)
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Positron lifetime measurements were carried out in four different samples of silicon, namelyn-type (P-doped) 75 Ωcm,n-type (Sb-doped) 0.018 Ωcm,p-type (B-doped) 60 Ωcm andp-type (B-doped) 0.02 Ωcm. The measurements were made at room temperature and at 77K. A positron lifetime of τ1=(230±2) psec was found for all samples, independant of dopant or temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00884239
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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