ISSN:
1432-0630
Keywords:
78.66.Db
;
61.80.Ba
;
81.10.Eq
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Optical absorption coefficient spectra of thin silicon films were precisely investigated using a simple reflectance system with total reflectance mirrors placed on the rear side of samples in order to cancel an interference effect in a range between 1.1 eV and 3 eV. The absorption coefficient decreased according to crystallization as the laser energy increased and it got similar to that of single crystalline silicon in the range of 1.7 eV ∼ 3 eV. However, the absorption coefficient was higher than 102 cm−1 in the photon energy lower than 1.3 eV. This probably results from band tail states caused by defect states localized at grain boundaries in the crystallized films. 2.5%-phosphorus doped laser crystallized silicon films had a high optical absorption coefficient ( 〉 104 cm−1) in the low photon energy range (1.1 eV ∼ 1.7 eV) caused by free carriers produced from the dopant atoms activated in the silicon films. The experimental results gave the carrier density of 1.3 × 1021 cm3 and the carrier mobility of 20 cm2/Vs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01567322
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