ISSN:
1432-0630
Keywords:
68.55 + b
;
62.20 Fe
;
78.65 Jd
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract In-depth stress distribution GaAs layers grown by Molecular Beam Epitaxy (MBE) on Si (001) has been studied by X-ray diffraction, photoluminescence and Raman spectroscopy. In order to determine the stress state at different distances to the interface GaAs/Si, layers of different thickness were prepared by chemical etching of the grown samples. We observe a non-uniform residual strain distribution through the GaAs on Si epilayer. Residual strain of thermal origin is larger in the highly defective region (∼ 0.4 μm) near the GaAs/Si interface where we have found a non-elastic relation between measured in-plane (a ‖) and in growth direction (a ⊥) lattice parameters. However, thermal strain is partially relaxed by formation of 107 cm−2 dislocations in the region of better crystalline quality near the external surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324262
Permalink
