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  • 72.80  (2)
  • 63.20  (1)
  • PACS: 78.65; 61.80J  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Generation of optical contrast in insulating materials by irradiation with focused ion beams (2000)
    Springer
    Applied physics 71 (2000), S. 565-569 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 78.65; 61.80J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The optical properties of crystalline insulating materials can markedly be modified by irradiation with energetic ions. The exposed areas of such materials absorb and reflect light more strongly than non-irradiated ones. In this way, optical contrast is created. With modern equipment, ion beams of sufficient intensity can be focused to submicron dimensions. Thus, both analog and digital information can be recorded with pixel densities of Gbit/cm2 to Tbit/cm2. In particular, crystalline films of group-IV elements of the periodic system, such as Si, SiC and CD (diamond), are best suited for this novel ionographic process. The physical foundations of this technology and the resulting properties of the recorded data will be discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390000625
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Optical absorption and electronic transport in ion-implantation-doped polycrystalline SiC films (1995)
    Springer
    Applied physics 61 (1995), S. 193-201 
    Details
    ISSN: 1432-0630
    Keywords: 72.20 ; 72.80 ; 78.65
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Fine-grained (d≈0.1 μm), polycrytalline SiC films were prepared on top of insulating and optically transparent sapphire substrates by means of a thermal crystallization technique. Optical absorption measurements indicate that the individual SiC grains consist of relatively defect-free β-SiC surrounded by high-defect density grain-boundary material. Nominally undoped material exhibits a low de conductivity (δ≈10−8 Ω−1 cm−1) in the dark and an efficient photoconductivity apon illumination with short-wavelength UV light. The temperature dependence of the de transport exhibits a quasi-Arrhenius-type behaviour with average activation energies of the order to 0.6 eV. A characteristic feature of this kind of transport is a continuous increase in activation energy with increasing film temperature. Upon doping with N, P and Al ions, the average activation energy is decreased and room temperature conductivities of the order of 0.1 Ω−1 cm−1 are reached. Doping with B ions, on the other hand, only leads to high-resistivity material. It is shown that the electronic transport in doped SiC-On-Sapphire (SiCOS) films can be successfully modelled in terms of a grain-boundary-dominated conduction process. In this process thermal activation across potential barriers at the grain-boundary surfaces competes with funneling through these same barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538389
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Ion-implantation doping of crystalline 6H-SiC (1995)
    Springer
    Applied physics 61 (1995), S. 363-367 
    Details
    ISSN: 1432-0630
    Keywords: 72.80 ; 61.72.Tt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The feasibility of ion implantation for p- and n-type doping of 6H-SiC has been studied. Single crystals were implanted at room temperature with 1017 ions/cm3 of B and Al, and of N and P, respectively, and step-annealed at temperatures up to 1900 K. The state of the crystal order was monitored by ion-beam-scattering techniques. After annealing at 1800 K, at a backscattering yield of about 1% in 〈0001〉-direction, maximum electrical activity of all dopants was observed within the range of 3–80% at room temperature. Impurity ionization levels were derived from conductivity measurements in the temperature range between 300–80 K, which also indicate the presence of compensating defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01540109
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    Paper (German National Licenses)
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  • 4
    Electronic Resource
    Electronic Resource
    Nuclear reaction spectroscopy of vibrational modes of solids (1986)
    Springer
    The European physical journal 325 (1986), S. 183-191 
    Details
    ISSN: 1434-601X
    Keywords: 24.30 ; 63.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract The effects of target-atom vibrations on nuclear reaction kinetics have been examined. In particular, Doppler broadening of resonance-type and elastic-scattering reactions has been considered in detail. Depending on the specific process parameters, the resulting energy widths can be many orders of magnitude larger than the energies of the vibrational states of the target solid. Comparison of experimental results on a hydrogen-bearing thin target with the theoretical predictions shows excellent agreement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01289649
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    Paper (German National Licenses)
    Fulltext
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