ISSN:
1432-0630
Keywords:
64.75
;
66.30J
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A new model for phosphorus segregation at the Si-SiO2 interface is derived and verified by experimental data. The model considers for the first time, a third phase, the interface layer itself, in addition to the Si and SiO2 phases, and the dynamics of the three-phase system is described in terms of rate equations. In particular, the phosphorus compound formation in the interface layer (phosphorus pile-up), which renders the dopant electrically inactive to a large extent, is described as a competition of the dopant in silicon and in silicon dioxide in filling and depleting a constant density of interface traps. Our model allows an unambiguous correlation of the dopant concentration on both sides of the interface with the integral dose of the interface phosphorus pile-up. Experimental data for different phosphorus concentrations, different temperatures, and different oxidation ambients, including inert anneals, are fitted by a single curve.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00616992
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