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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 29 (1982), S. 29-32 
    ISSN: 1432-0630
    Keywords: 66 ; 72.20 ; 77.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dielectric properties of titanium doped magnesium oxide (Ti/MgO) and gadolinium doped magnesium oxide (Gd/MgO) single crystals have been measured at room temperature over the frequency range 500 Hz to 50 kHz. For both the crystals, the dielectric constantɛ′ is found to be independent of frequency and the ac conductivity Re{σae} agrees well with the relation Re{σae}∫Ω n ,Ω being the angular frequency with n=0.84±0.05 for Ti/MgO andn=0.81±0.03 for Gd/MgO. The data fits well with the relationɛ″∫Ω n−1(n〈1),ɛ″ being the dielectric loss factor. An explanation may be found on the basis of the hopping phenomenon.
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 36 (1985), S. 63-65 
    ISSN: 1432-0630
    Keywords: 66 ; 72.20 ; 77.20
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The dielectric properties of titanium-doped magnesium oxide (Ti/MgO) and nickel-doped magnesium oxide (Ni/MgO) single crystals have been measured in the range of temperature from 300 to 450 K at the microwave frequency of 9.31 GHz. For both crystals the dielectric properties are found similar. From the conductivity data, the activation energy in the measured temperature region has been estimated to be 0.15 eV. The values of the temperature dependence (ε′−1)−1(ε′+2)−1 (∂ε′/∂T) p have been calculated. The data confirms the Bosmann and Havinga postulate that, for materials in which the dielectric constant;ε′ is less than 20 the temperature dependence should be positive.
    Type of Medium: Electronic Resource
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