ISSN:
1432-0630
Keywords:
68.55.+b
;
64.70.Kb
;
66.30.Ny
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We have investigated the reaction of a thin Co film with a (100) Si (Si c ) or an evaporated Si (Si e , which is amorphous) substrate during thermal annealing. On either substrate, Co2Si and CoSi form simultaneously and the growth of each phase has a square root of time dependence. Both silicides grow faster on Si c than on Si e . A model is proposed to calculate the effective diffusion constant in each silicide from the growth data of the silicides. The activation energies of the effective diffusion constants in Co2Si and CoSi grown on Si c are 1.7±0.1 eV and 1.8±0.1 eV, respectively; while those on Si e are 1.85±0.1 eV and 1.9 ±0.1 eV, respectively. The differences observed for the two substrates are tentatively attributed to the presence of impurities in Sie and to the microstructural differences of the silicides formed on either substrate.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00624936
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