ISSN:
1432-0630
Keywords:
61.70.Jc
;
81.10.Dn
;
73.40.Ty
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The coalescence of epitaxial silicon layers which are grown laterally over oxidized and patterned Si substrates is studied using various techniques of transmission electron microscopy (TEM). The epitaxial layers, the seam of coalescence and lattice defects formed by the coalescence are characterized. The epitaxial layer as a whole is found to be bent with respect to the substrate. Such misorientations, together with facetting of the growth fronts of the coalescing layers, may lead to the formation of solvent inclusions, dislocations and stacking faults at the seam of coalescence. However, under favourable conditions, the seam is found to be entirely defect-free.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00331784
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