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  • 68.55  (2)
  • 73.40T  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy (1992)
    Springer
    Applied physics 54 (1992), S. 103-105 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40T ; 85.30D
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We describe the first MOS transistors fabricated in silicon-on-insulator layers, obtained by liquid phase epitaxial lateral overgrowth of Si over SiO2. Growth is performed around 930°–920° C using indium as a solvent. The layers are therefore p-type and have a doping of 4·1016 cm−3. Electron mobilities of 540 cm2/Vs are obtained in the inversion channel; the threshold voltage of transistors with a gate length of 14.1 μm is 510 mV. Our data demonstrate the applicability of liquid-phase epitaxial Si grown over oxidized Si for future use in three-dimensional integrated-device processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348140
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Low-density dislocation arrays at heteroepitaxial Ge/GaAs-interfaces investigated by high voltage electron microscopy (1979)
    Springer
    Applied physics 18 (1979), S. 67-75 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.70
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract High-voltage electron microscopy in combination with a large-area thinning technique has been applied to thin epitaxial Ge layers on GaAs substrates. These layers exhibit 60° misfit dislocations along the 〈110〉 directions parallel to the interface. Various dislocation reactions are evaluated from the electron micrographs, e.g. the formation of non-glissile 90° dislocations from two nearly parallel 60° dislocations and the annihilation reaction of two crossing 60° dislocations with identical Burgers vectors. The latter reaction occasionally leads to a dislocation multiplication. The misfit dislocations in very thin layers (∼0.5 μm thickness and a linear dislocation density of less than 100 dislocation lines/cm) tend to be arranged in groups rather than being equidistant. Consequences for the interpretation of x-ray topograms are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00935905
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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