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  • 68.55.Df  (1)
  • 78.30-j  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Raman spectroscopy—A versatile tool for characterization of thin films and heterostructures of GaAs and AlxGa1−xAs (1978)
    Springer
    Applied physics 16 (1978), S. 345-352 
    Details
    ISSN: 1432-0630
    Keywords: 78.30-j ; 68.55+b
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract It is shown that Raman spectroscopy can provide useful information on characteristic properties of thin crystalline films of compound semiconductors. Crystal orientation, carrier concentration, scattering times of charge carriers, composition of mixed crystals and depth profiles can be studied in thin layers and heterostructures of GaAs and AlxGa1−xAs. The advantages and disadvantages of Raman scattering compared to conventional characterization methods are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00885858
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    The coalescence of silicon layers grown over SiO2 by liquid-phase epitaxy (1993)
    Springer
    Applied physics 57 (1993), S. 249-254 
    Details
    ISSN: 1432-0630
    Keywords: 68.55.Df ; 73.40.Ty
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We have investigated by liquid-phase epitaxy (LPE) the coalescence of defect-free silicon-on-insulator (SOI) layers. The SOI lamellae grow out laterally from neighbouring seeding windows and spread over the SiO2. In our study, the seeding window edges are straight. The long window edges are parallel and extend in the (111) substrate plane in $$[11\bar 2]$$ direction. Coalescence of SOI lamellae takes place without the formation of defects whenever it begins at one point and then proceeds in directions parallel to the longer edges of the windows in a “zip”-like mechanism. Defect-free coalescence seams reach lengths of up to 150 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00332598
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
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