ISSN:
1432-0630
Keywords:
68.55.Df
;
73.40.Ty
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract We have investigated by liquid-phase epitaxy (LPE) the coalescence of defect-free silicon-on-insulator (SOI) layers. The SOI lamellae grow out laterally from neighbouring seeding windows and spread over the SiO2. In our study, the seeding window edges are straight. The long window edges are parallel and extend in the (111) substrate plane in $$[11\bar 2]$$ direction. Coalescence of SOI lamellae takes place without the formation of defects whenever it begins at one point and then proceeds in directions parallel to the longer edges of the windows in a “zip”-like mechanism. Defect-free coalescence seams reach lengths of up to 150 μm.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00332598
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