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  • 72.20  (1)
  • Acyclovir resistance  (1)
  • 1
    Digitale Medien
    Digitale Medien
    Herpes simplex virus type-2 ulcers resistant to acyclovir in an AIDS patient — Successful treatment with foscarnet (1991)
    Springer
    Journal of molecular medicine 69 (1991), S. 274-278 
    Details
    ISSN: 1432-1440
    Schlagwort(e): Herpes simplex virus ; Acyclovir resistance ; Foscarnet
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Medizin
    Notizen: Summary The case of a 25-year-old homosexual man with large inguinal and perianal ulcers is reported. He had been pretreated extensively with acyclovir. Herpes simplex virus (HSV) was identified in the ulcer tissue byin-situ hybridization. No clinical improvement with acyclovir but a prompt response to foscarnet was noted. In a relapse after 11 weeks an acyclovir-resistant HSV type 2 was isolated. Again, a prompt response to foscarnet was noted. The case is presented in detail, and the clinical impact of resistance of HSV to acyclovir is discussed.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF01666854
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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  • 2
    Digitale Medien
    Digitale Medien
    Distinction between avalanche and tunneling breakdown in one-sided abrupt junctions (1978)
    Springer
    Applied physics 16 (1978), S. 191-194 
    Details
    ISSN: 1432-0630
    Schlagwort(e): 72.20 ; 79.20
    Quelle: Springer Online Journal Archives 1860-2000
    Thema: Maschinenbau , Physik
    Notizen: Abstract The distinction between avalanche and tunneling breakdown in one-sided abrupt junctions is made on the basis of a new, simple expression for the tunneling breakdown field strengthF t. It is shown thatF t [V/cm] depends upon the temperatureT [K], the reduced tunneling effective massm eff + /m o and the semiconductor energy band gapE g [eV] according to the following equation $$F_t = 1.76 \cdot 10^6 \cdot \left( {\frac{T}{{300}}} \right) \cdot \left( {\frac{{m_{eff}^ + }}{{m_0 }} \cdot E_g } \right)^{{1 \mathord{\left/ {\vphantom {1 2}} \right. \kern-\nulldelimiterspace} 2}} [V/cm].$$ Using published calculations for the avalanche breakdown voltage, the result is applied to the semiconductors Ge, Si, GaAs and GaP at 300 K and InSb at 77K.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1007/BF00930386
    Bibliothek Standort Signatur Band/Heft/Jahr Verfügbarkeit
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    Artikel (Nationallizenzen)
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