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Transport properties of silicon doped n-indium selenide (1992)

Riera, J. ; Segura, A. ; Chevy, A.

Springer

Applied physics 54 (1992), S. 428-430

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ISSN: 1432-0630

Keywords: 71.55.—i ; 72.20.—i ; 73.20.Dx

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract Hall effect and resistivity measurements in silicon doped indium selenide (InSe), from 7K to 500K, are reported. Results are interpreted through a model, previously proposed for tin doped InSe, that takes into account the contribution of both three- and two-dimensional electrons to charge transport along the layers in InSe.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00324166

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