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  • 72.20.Jv  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 56 (1993), S. 22-28 
    ISSN: 1432-0630
    Keywords: 42.65.Gv ; 72.20.Ht ; 72.20.Jv ; 78.50.Ge
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract A study of saturation of the absorption and photoconductivity of Sb and P donors in Ge for radiation of 90 μm wavelength, i.e., of energy very closely above their ionization edges is presented at T=9.3 K. Under these conditions negligible heating by the excess radiation energy is expected, which provides a convenient opportunity to study the kinetics of photoionization and recombination. From these measurements we have determined the donor capture cross section of electrons at 9.3 K to be σc=(1.2±0.7)×10−12cm−2, and the relaxation time from the 2s to the ground state as τ21=(5.8±1.0)×10−10s. The saturation intensity of the absorption coefficient is around three orders of magnitude higher than the saturation intensity of the photoconductivity. We explain the nonlinear photoconductivity by the Debye-Conwell dependence of the mobility on the number of photoionized donors and compensating acceptors.
    Type of Medium: Electronic Resource
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