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  • 73  (1)
  • PACS: 72.80; 61.72.Tt  (1)
  • PACS: 78.65; 61.80J  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 71 (2000), S. 565-569 
    ISSN: 1432-0630
    Keywords: PACS: 78.65; 61.80J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The optical properties of crystalline insulating materials can markedly be modified by irradiation with energetic ions. The exposed areas of such materials absorb and reflect light more strongly than non-irradiated ones. In this way, optical contrast is created. With modern equipment, ion beams of sufficient intensity can be focused to submicron dimensions. Thus, both analog and digital information can be recorded with pixel densities of Gbit/cm2 to Tbit/cm2. In particular, crystalline films of group-IV elements of the periodic system, such as Si, SiC and CD (diamond), are best suited for this novel ionographic process. The physical foundations of this technology and the resulting properties of the recorded data will be discussed.
    Type of Medium: Electronic Resource
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  • 2
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 61 (1995), S. 363-367 
    ISSN: 1432-0630
    Keywords: PACS: 72.80; 61.72.Tt
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  The feasibility of ion implantation for p- and n-type doping of 6H-SiC has been studied. Single crystals were implanted at room temperature with 1017 ions/cm3 of B and Al, and of N and P, respectively, and step-annealed at temperatures up to 1900 K. The state of the crystal order was monitored by ion-beam-scattering techniques. After annealing at 1800 K, at a backscattering yield of about 1% in 〈0001〉-direction, maximum electrical activity of all dopants was observed within the range of 3–80% at room temperature. Impurity ionization levels were derived from conductivity measurements in the temperature range between 300–80 K, which also indicate the presence of compensating defects.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    Springer
    Applied physics 13 (1977), S. 255-259 
    ISSN: 1432-0630
    Keywords: 73
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract After bombarding silicon single crystals with heavy neon ion doses, the resulting amorphous surface layer has been found to be electrically insulated from the underlying bulk material. Current-voltage characteristics indicate the formation of a junction between the crystalline and the damaged layer. As a consequence, the electrical properties of the amorphous layer can be measured at low temperatures up to about 230 K and considerably beyond room temperature, if thick crystal wafers and silicon-on-sapphire (SOS) samples, respectively, are used.
    Type of Medium: Electronic Resource
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