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  • 73  (1)
  • PACS4077, 6170T, 6180J  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Observation of $^1$ H tunneling diffusion in crystalline Si (1997)
    Springer
    Applied physics 64 (1997), S. 207-210 
    Details
    ISSN: 1432-0630
    Keywords: PACS4077, 6170T, 6180J
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. $^1$ H diffusion in crystalline Si has been measured in the temperature range of 50–220 K. The temperature dependence of the diffusion coefficient follows a power law of the type $D\propto T^{\rm{n}}$ , $n=5.6\pm0.3$ . D( $^1$ H) values range between 10 $^{-18}$ – $10^{-14}$ cm $^2$ /s up to about 200 K, where a transition to thermally activated diffusion is indicated. The low-temperature transport mechanism is attributed to tunneling.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050466
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    On the insulating properties of the interfacial layer between ion bombarded-amorphous and crystalline silicon (1977)
    Springer
    Applied physics 13 (1977), S. 255-259 
    Details
    ISSN: 1432-0630
    Keywords: 73
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract After bombarding silicon single crystals with heavy neon ion doses, the resulting amorphous surface layer has been found to be electrically insulated from the underlying bulk material. Current-voltage characteristics indicate the formation of a junction between the crystalline and the damaged layer. As a consequence, the electrical properties of the amorphous layer can be measured at low temperatures up to about 230 K and considerably beyond room temperature, if thick crystal wafers and silicon-on-sapphire (SOS) samples, respectively, are used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00882889
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    Paper (German National Licenses)
    Fulltext
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