ISSN:
1432-0630
Keywords:
68.60.Dv
;
68.55.Jk
;
73.40.Ns
;
73.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The thermal stability of CoSi2 thin films on GaAs substrates has been studied using a variety of techniques. The CoSi2 thin films were formed by depositing Co(500 Å) and Si(1800 Å) layers on GaAs substrates by electron-beam evaporation followed by annealing processes, where the Si inter-layer was used as a diffusion/reaction barrier at the interface. The resistivity of CoSi2 thin films formed is about 30 μΩ cm. The Schottky barrier height of CoSi2/n-GaAs is 0.76 eV and the ideality factor is 1.14 after annealing at 750° C for 30 min. The CoSi2/GaAs interface is determined to be thermally stable and the thin film morphologically uniform on GaAs after 900° C/30 s anneal. The CoSi2 thin films fulfill the requirements in GaAs self-aligned gate technology.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00348240
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