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Ultrafast carrier dynamics in strained In1−xGaxAs/InP heterostructures (1992)

Kersting, R. ; Kohl, A. ; Voss, T. ; [et al.]

Springer

Applied physics 55 (1992), S. 596-598

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ISSN: 1432-0630

Keywords: 73.40.−c ; 73.50.Gr ; 78.47.+p

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract The transfer of electrons and holes from barriers to wells is investigated in strained In1-xGaxAs/InP multiple quantum wells by time-resolved luminescence upconversion with 300 fs time resolution. The transfer times are in the range of a few ps and independent of the Ga content. The investigation of Ga-rich structures allows to observe directly the hole transfer.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00331679

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