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Digitale Medien

Carrier recombination and high-barrier Schottky diodes on silicon (1990)

Wittmer, M.

Springer

Applied physics 51 (1990), S. 451-454

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Details

ISSN: 1432-0630

Schlagwort(e): 73.30+y ; 73.50.Gr ; 73.40.Ei

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract Small-area high-barrier Schottky diodes have a very high dynamic resistance. Consequently, special care is needed when measuring the current-voltage characteristic of such diodes. The reported observation of carrier recombination in the depletion layer of high-barrier IrSi/Si Schottky diodes at room temperature is shown to be due to instrumental loading of the diodes. Careful measurements show that carrier recombination is observed only below 200 K and is dependent on the dimension of the diode.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00324725

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