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  • 73.40T  (1)
  • 81.15.Lm  (1)
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  • 1
    Electronic Resource
    Electronic Resource
    Development of depressions and voids during LPE growth of GaAs (1978)
    Springer
    Applied physics 15 (1978), S. 243-252 
    Details
    ISSN: 1432-0630
    Keywords: 81.15.Lm ; 68.55+b ; 61.70.Jc
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Depressions and voids, morphological defects which are frequently encountered in LPE-layers of III–V compounds, are described. Their development is discussed for GaAs LPE layers exhibiting facet growth as well as terrace growth. Experimental conditions for the growth of depression- and void-free layers are specified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00896103
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    MOS transistors with epitaxial Si, laterally grown over SiO2 by liquid phase epitaxy (1992)
    Springer
    Applied physics 54 (1992), S. 103-105 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 73.40T ; 85.30D
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract We describe the first MOS transistors fabricated in silicon-on-insulator layers, obtained by liquid phase epitaxial lateral overgrowth of Si over SiO2. Growth is performed around 930°–920° C using indium as a solvent. The layers are therefore p-type and have a doping of 4·1016 cm−3. Electron mobilities of 540 cm2/Vs are obtained in the inversion channel; the threshold voltage of transistors with a gate length of 14.1 μm is 510 mV. Our data demonstrate the applicability of liquid-phase epitaxial Si grown over oxidized Si for future use in three-dimensional integrated-device processing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00348140
    Library Location Call Number Volume/Issue/Year Availability
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    Paper (German National Licenses)
    Fulltext
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