Library

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Complementary imaging of granular Co-Ag films with magneto-optical indicator film technique and magnetic force microscopy : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 5315-5317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A magneto-optical indicator film (MOIF) technique and magnetic force microscopy were used for visualization and direct real-time experimental study of the magnetization processes of magnetic Co90Ag10 granular films. It is shown that the magnetization reversal of the as-deposited films follows a specific two-step course. The first stage is characterized by gradual spin rotation to large angles up to 90° without domain formation. Further magnetization reversal proceeds by the nucleation and motion of zigzag-shaped domain walls. The dendritic structure of the domain walls was observed using both techniques. Also tracks of magnetic inhomogeneities remaining behind moving zigzag-shaped domain walls was revealed by MOIF. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361363
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Magneto-optical indicator film (MOIF) microscopy of granular and layer structures (abstract) : The 40th annual conference on magnetism and magnetic materials (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 6073-6073 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the possibilities of application of magneto-optical indicator film (MOIF) technique for visualization and direct experimental study in real time of the magnetization processes and nondestructive characterization of the quality of magnetic thin granular films and multilayers. The technique utilizes a transparent indicator film, a Bi-substituted iron garnet with in-plane anisotropy, placed on the top of a sample. Polarized light passes through the indicator film and is reflected back by an Al underlayer. Magnetic stray fields with a component perpendicular to the film plane are observed through the magneto-optic Faraday effect created in the garnet film. An investigation of the magnetic moment distribution in granular single films and multilayers was carried out using this method. Some examples of magnetic stray field images of domain walls of different types obtained by MOIF technique and magnetic force microscopy are described. The experimental data are compared with theoretical estimations. The detailed information is obtained on the spin rotation processes as well as on the domain wall nucleation and motion during the remagnetization of these materials. Peculiarities of the magnetization reversal of multilayers with different types of exchange interlayer coupling have been revealed and discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362096
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Experimental study of magnetization reversal processes in nonsymmetric spin valve : The 41st annual conference on magnetism and magnetic materials (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 5215-5217 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated a nonsymmetric bottom giant magnetoresistance spin valve with the structure Si/NiO/Co/Cu/Co/Ta, as well as single ferromagnetic Co layers on antiferromagnetic NiO, with or without a nonmagnetic Cu spacer. Magnetic hysteresis loops have been measured by SQUID magnetometry, and magnetic domain structures have been imaged using an advanced magneto-optical indicator film (MOIF) technique. The MOIF technique demonstrated that the first stage of magnetization reversal is characterized by nucleation of many microdomains. With increasing reversed field, the domain walls move over small distances (5–20 μm) until annihilation. The domain size was observed to increase with the thickness of the Co layer. When an alternating magnetic field was applied, the domain structure was dramatically changed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364954
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The overshoot effect in transient electroluminescence from organic bilayer light emitting diodes: Experiment and theory (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7514-7525 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Transient electroluminescence (EL) from organic bilayer light emitting diodes addressed by a rectangular voltage pulse often features an overshoot when the voltage is switched off. Experimental results are presented for a variety of hole transporting layers in contact with an oxadiazole layer simultaneously acting both as a blockade for holes and as an electron transport layer. The overshoot occurs in spin coated yet not in vapor deposited samples. A model is developed to rationalize charge recombination under the premise (i) of an interfacial layer of finite thickness between hole and electron transport layers in which both transport molecules coexist and (ii) of interfacial energy barriers impeding both hole and electron passage. It predicts the occurrence of an EL overshoot due to the recombination of stored electrons and holes under the action of their mutual space charge field when the external voltage is switched off. The temporal pattern of the predicted transient EL signal is in good agreement with experiment. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365293
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Overshoot effect in transient electroluminescence from single layer organic light-emitting diodes (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 5554-5560 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigate the transient electroluminescence (EL) from organic light-emitting diodes based on tristilbeneamine dispersed in polysulfone. An EL overshoot is observed a few microsecond after reversing the driving voltage. The amplitude of the EL spike can considerably exceed the previous EL level. The maximal EL intensity is strongly influenced by temperature, time duration of voltage pulse, and magnitude of reverse voltage. The time integrated overshoot intensity of EL scales as a power law with the pulse length. We attribute the overshoot effect to (i) the accumulation of holes on the interface formed by a polymer and a thin insulating layer of aluminum oxide next to the aluminum cathode under application of positive bias and (ii) the drift of holes back to the anode when the external field is being reversed and recombination with electrons in the bulk of the material. It turns out that the surface roughness of the Al2O3 layer is important for the recombination kinetics under reverse bias. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1412581
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    An analytic model of electroluminescence in bilayer organic light emitting diodes with Ohmic injection of charge carriers (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1823-1826 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple analytic model for the electroluminescence (EL) intensity and the total cell current in bilayer light-emitting diodes (LEDs) with Ohmic contacts is presented. Results are in good agreement with both existing experimental data and numerical simulations. This model permits the semiquantitative analyses of the influence of the most important parameters on the EL and cell currents. In particular, dependence of EL current on the ratio of electron to hole mobilities and on the LED geometry is analyzed. The predictions of the model are compared with analogous results for LEDs with barrier-limited injection of electrons. It is shown that the values of EL currents can be comparable. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1333028
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Optical detection of charge carriers in multilayer organic light-emitting diodes: Experiment and theory (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 89 (2001), S. 2690-2698 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated a multilayer organic light-emitting diode with 1,3,5-tris (N,N-bis-(4-methoxyphenyl)aminophenyl)-benzene acting as the hole transporting layer (HTL) and tris (8-hydroxy-quinolinolato) aluminum (Alq3) as the electron transporting layer. Positive charge carriers in the HTL were detected optically as a function of the applied bias. It was found that a hole injecting layer, consisting of 3,4 polyethylene-dioxy-thiophene doped with polystyrenesulfonate, forms an ohmic contact to the HTL by inducing a thin layer of holes in the interfacial region. An analytical model is developed to describe the observed carrier concentrations as well as the current–brightness–voltage characteristics quantitatively. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1343889
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Tunneling controlled electroluminescence switching in bilayer light emitting diodes (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 6515-6519 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It has been reported that in bilayer light emitting diodes in which large internal energy barriers for holes and electrons exist, electroluminescence features a step function-like onset upon applying the voltage. A theory is advanced to explain that effect. It is based upon time-dependent accumulation of interfacial charge followed by tunneling across the interface. Good agreement between theory and experiment is obtained. The effect may be exploited for signal addressing in flat panel displays. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.370155
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Onset of electroluminescence from bilayer light emitting diodes under space charge limited majority carrier injection (2000)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 88 (2000), S. 1886-1892 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic theory has been developed to analyze the rise of electroluminescence from bilayer light emitting diodes upon applying a rectangular voltage pulse if the current of majority carriers is space charge limited while minority carrier injection is electrode limited. The onset of electroluminescence is governed by the growth of the interfacial charge densities rather than by the transit time. This result suggests that, for appropriate interfacial energy barriers, balanced injection can be established even if only one of the electrodes is ohmic. A qualitative agreement between theory and experiment has been obtained. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1303064
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Rise time of electroluminescence from bilayer light emitting diodes (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2334-2340 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An analytic theory has been developed to calculate the rise of electroluminescence from bilayer light emitting diodes with internal energy barriers for both majority and minority carriers upon applying a rectangular voltage pulse. Unless the mobility of the minority carriers—usually electrons, instead, is ≤2×10−7 cm2/V s, onset of electroluminescence is governed by the growth of the interfacial charge densities and the concomitant redistribution of the electric field inside the device rather than by charge carrier transport. The crucial system parameters turn out to be the energy barriers that control hole and electron injection. Good agreement with experiment is found. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368301
    Library Location Call Number Volume/Issue/Year Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...