ISSN:
1432-0630
Keywords:
85.30
;
77.55
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A simplified analogue to an Ion-Sensitive Field-Effect Transistor (ISFET) was tested in the presence of ions. The gate electrode in an ISFET is an aqueous solution, unlike in a Metal-Oxide Field-Effect Transistor (MOSFET) where the gate is a metal. A problem with the ISFET is that the insulating oxide between the silicon and the solution is slowly penetrated by various ions such as OH− or Na+ causing a change in the characteristics of the device. The application of thin alumina platelets and thin MoS2 films as a protective insulating layer, when deposited over the insulating silicon oxide, was tested against the penetration of ions. It is shown that there is a significant decrease in the ion penetration through to the silicon oxide layer, depending on the applied bias, when the oxide is covered with thin alumina or MoS2 layers. The effect of different ions and ion concentrations are presented. Suggestions for further improvement are made.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01568085
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