ISSN:
1432-0630
Keywords:
71.55.Eq
;
78.30.Fs
;
63.20.Pw
;
61.70.Tm
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A number of experimental and theoretical studies indicate that DX centers in GaAs, its alloys and other III–V semiconductors have negative U properties. Using far infrared localized vibrational mode (LVM) spectroscopy of Si donors in GaAs under large hydrostatic pressure in a diamond anvil cell we have discovered an LVM of the Si DX center. From the ratio of the LVM absorption lines of SiGa and SiDX and the compensation in our GaAs samples, we show unambiguously that two electrons are trapped when the ionized shallow Si donors transform into negatively charged DX centers, in full agreement with the negative U model.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323430
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