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  • 78.40  (1)
  • ZnSe  (1)
  • 1
    Electronic Resource
    Electronic Resource
    Disorder and the shape of the R-lines in Cr3+-doped garnets (1990)
    Springer
    Applied physics 50 (1990), S. 565-572 
    Details
    ISSN: 1432-0630
    Keywords: 78.40 ; 78.55 ; 42.55
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract This paper describes measurements of the R-line emission from Cr3+ ions in Y3Ga5O12, Gd3Sc2Ga3O12, and Gd3Sc2Al3O12. Discrete splittings of the lines are interpreted as due to disorder on the cation sublattices. Assuming statistical distributions of the cations on the different cation sublattices enables estimates to be made of the degree of non-stoichiometry in the crystals.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00323448
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Depth-resolved cathodoluminescence of ZnSe epilayers (1994)
    New York, NY [u.a.] : Wiley-Blackwell
    Advanced Materials for Optics and Electronics 3 (1994), S. 295-299 
    Details
    ISSN: 1057-9257
    Keywords: Cathodoluminescence ; Strain ; ZnSe ; Depth profiling ; Defects ; Impurities ; Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Notes: In This paper we illustrate the use of an electron beam of variable energy to get depth information on the strain, impurity and defect distribution in ZnSe epilayers. From the increase in splitting of the free light and heavy hole exciton bands with increasing electron beam energy we deduce that the strain increases with depth. From the increase in the luminescence intensity of the impurity and defect bands compared with the luminescene intensity of the free heavy hole exciton band with increasing electron beam energy we deduce that the impurity and defect densities also increase as a function of depth.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1002/amo.860030142
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    Paper (German National Licenses)
    Fulltext
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