ISSN:
1432-0630
Keywords:
81.15.Gh
;
82.30.Lp
;
79.60.-i
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Boron-carbon thin films have been successfully deposited on Si (111) from the synchrotron radiation induced decomposition of the nido-2,3-diethyl-dicarbahexaborane, (CH3CH2)2C2B4H6. There are indications that molecular precursor states to complete dissociation exist, and that dissociation is the rate limiting step. As with deposition of boron from decaborane, there is an activation barrier to dissociation of diethylcarborane on Si (111). The composition of the growing film, as determined by the boron to carbon ratio, is strongly dependent upon the boron concentration at the surface of the substrate. The boron concentration of the film increases with increasing film thickness.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00324169
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