ISSN:
1432-0630
Keywords:
61.70.Tm
;
79.20.Ds
;
61.70.B
;
61.80.Jh
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract It is well established that the pulsed-laser annealing of as-implanted Si introduces electrically active defects. The aim of this paper is to show that these defects can be neutralized by low-energy hydrogen ion implantation. The techniques used for the sample characterization are current-voltage measurements and capacitance transient spectroscopy.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00620729
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