ISSN:
1432-0630
Keywords:
79.20R
;
34.50
;
34.70
;
79.80
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Transient adsorption or skipping motion of silicon ions scattered under specular conditions from a Cu(111) surface is reported. The phenomena is identified on the basis of the observation of discrete energy loss peaks in the scattered positive and negative ion kinetic energy distributions, together with their behaviour upon variation of the crystal azimuth, incidence angle of the beam to the surface, and scattering angular distributions. Up to five reflections in a binding potential were seen. We propose that the beam is trapped following an energy loss, by electron-hole pair or plasmon excitation, which exceeds the incident beam energy component normal to the surface. The results lend strong support to the thesis that ion beam techniques can probe the family of potential surfaces upon which adsorption and reaction, at thermal energies, proceed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00619702
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