ISSN:
1432-0630
Keywords:
81.05. — t
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract Experimental investigations on the preparation, characterization, and properties of several bulk and thin-film ternary alloys based on the chalcopyrite II–IV–V2 semiconductors are presented. Rapid melt solidification in vacuum-sealed fused-silica tubes resulted in amorphous alloy formation in almost all compositions in the system CdGeAs2-CdSiAs2. ZnGeAs2-CdGeAs2 alloys showed very limited tendency toward amorphous phase formation. Phase separation, crystallization and electrical properties were studied for amorphous Cd-Ge-Si-As alloys by thermal analysis, transmission electron microscopy, X-ray diffraction, and Hall measurements. Rapid crystallization resulted in a reversal of conductivity type (p-to-n or vice versa). Crystallized glassy alloys showed room-temperature mobility of 64 cm2/V s, and a hole concentration of 1020 cm−3. The p-to-n change in conductivity type upon amorphous-to-crystal transformation suggests that these alloys can be used to fabricate p-n junction devices by surface crystallization of the amorphous phase.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF01571686
Permalink
