ISSN:
1432-0630
Keywords:
66.30
;
78.90
;
81.30
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract A study of the laser mixing of four-layered thin films of Ge/Al has been made. We combine Rutherford backscattering (RBS) and transmission electron microscopy (TEM) to perform depth profile and microstructure analysis. The results show that the mixing is interfacially initiated and that the surface layer (Ge) and the layer at the film-substrate interface (Al) remain partially unmixed. The degree of mixing does not depend critically on the as-grown layer configuration but does depend on the nature of the substrate. The mixing process is well simulated in the frame of the classical diffusion theory and the estimated average temperatures are close to that of the eutectic. The mixed layer is found to be amorphous and the calculated cooling rates are in the 109 Ks−1 range.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323687
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