ISSN:
1432-0630
Keywords:
81.40.Tv
;
81.40.Rs
;
78.65.Ez
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract WSi2 polycrystalline films of different thicknesses were prepared by low pressure chemical vapor deposition on silicon wafers, and their crystallization properties were studied as a function of the annealing temperature. Structural measurements were performed by X-ray diffraction, detailing for the first time the phase transition from the amorphous to the hexagonal structure at an annealing temperature 380° C and from hexagonal to tetragonal above 700° C. The electrical sheet resistance showed the same transition temperatures. Optical characterization was performed by spectroscopic ellipsometry, and the real and imaginary part of the complex refractive index were obtained as a function of the annealing temperature in the 0.25–0.9 μm wavelength range. A broad optical band was found for samples annealed up to 700° C, while for higher annealing temperatures a transparency region for wavelengths greater than 0.5 μm and some significant structures appear. A corresponding behavior was observed in the infrared reflectance spectra. Furthermore, it was shown that the determination of the thickness of SiO2 grown on WSi2 requires a multilayer model, taking into account the transparency of tetragonal WSi2.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00323908
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