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Effect of laser light on n-GaAs photoetching (1990)

Švorčík, V. ; Rybka, V.

Springer

Applied physics 51 (1990), S. 61-63

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ISSN: 1432-0630

Keywords: 81.60 ; 82.65

Source: Springer Online Journal Archives 1860-2000

Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics

Notes: Abstract The etching of n-GaAs in aqueous solutions of hydroxides stimulated by HeNe and HeCd laser light was studied. It was found that at low laser-power densities (5–10 W · cm−2) the etched depths do not depend on the wavelength of the incident light. This conclusion is related to the concentration of the photogenerated holes on the semiconductor surface. The diffusion length and absorption depths for HeNe and HeCd lasers are compared.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1007/BF00324466

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