ISSN:
1432-0630
Keywords:
81.15
;
82.30
;
82.80
Source:
Springer Online Journal Archives 1860-2000
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
,
Physics
Notes:
Abstract The dependence of a-Si∶H film deposition by laser-induced decomposition of SiH4 on the different process variables is studied. The gas phase temperature in the beam center, produced by CO2 laser irradiation in parallel configuration, is estimated using a simple energy balance model. The surface temperature is measured with high accuracy employing a Ni sensor (250°–400 °C). The deposition rate and film properties such as the hydrogen content and the optical energy gap are determined as a function of these parameters. The production of H2 (≈10%), Si2H6 (≈2%), and Si3H8 in the gas phase during laser irradiation is proved by a mass spectrometric analysis. The chemical reaction processes induced in the gas phase and at the surface are discussed. A mechanism explaining the main features of the complicated chemistry involved is developed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1007/BF00617941
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