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  • Fat body metabolism  (2)
  • Polymer and Materials Science  (2)
  • Adipokinetic hormone Carbohydrate metabolism  (1)
Material
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Keywords
  • 1
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Insect Biochemistry and Molecular Biology 24 (1994), S. 473-480 
    ISSN: 0965-1748
    Keywords: Adipokinetic hormone Carbohydrate metabolism ; Blaberus discoidalis ; Cockroaches ; Fat body metabolism ; Hyperglycemic hormone ; Insect hypertrehalosemic hormone ; Trehalose ; Trehalose synthesis
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 2
    Electronic Resource
    Electronic Resource
    Amsterdam : Elsevier
    Insect Biochemistry and Molecular Biology 24 (1994), S. 357-362 
    ISSN: 0965-1748
    Keywords: Cockroach ; Fat body metabolism ; Gene expression ; Hypertrehalosemic hormone
    Source: Elsevier Journal Backfiles on ScienceDirect 1907 - 2002
    Topics: Biology
    Type of Medium: Electronic Resource
    Library Location Call Number Volume/Issue/Year Availability
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  • 3
    ISSN: 0006-3525
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Chemistry and Pharmacology
    Notes: We have used the molecular dynamics (MD) simulation package AMBER4 to search the conformation of a peptide predicted as a leucine zipper motif for the human immunodeficiency virus type I integrase protein (HIV IN-LZM). The peptide is composed of 22 amino acid residues and its location is from Val 151 to Leu 172. The searching procedure also includes two known α-helices that served as positive controls - namely, a 22-residue GCN4-p1 (LZM) and a 20-residue poly(L-alanine) (PLA). A 21-residue peptide extracted from a cytochrome C crystal (CCC-t) with determined conformation as a β-turn is also included as a negative control. At the beginning of the search, two starting conformations - namely, the standard right-handed α-helix and the fully stretched conformations - are generated for each peptide. Structures generated as standard α-helix are equilibrated at room temperature for 90 ps while structures generated as a fully stretched one are equilibrated at 600 K for 120 ps. The CCC-t and PLA helices are nearly destroyed from the beginning of equilibration. However, for both the HIV IN-LZM and the GCN4-p1 LZM structures, there is substantial helicity being retained throughout the entire course of equilibration. Although helix propagation profiles calculated indicate that both peptides possess about the same propensity to form an α-helix, the HIV IN-LZM helix appears to be more stable than the GCN4-p1 one as judged by a variety of analyses on both structures generated during the equilibration course. The fact that predicted HIV IN-LZM can exist as an α-helix is also supported by the results of high temperature equilibration run on the fully stretched structures generated. In this run, the RMS deviations between the backbone atoms of the structures with the lowest potential energy (PE) identified within every 2 ps and the structure with the lowest PE searched in the same course of simulation are calculated. For both the HIV IN-LZM and the GCN4-p1 LZM, these rms values decrease with the decrease of PE, which indicates that both structures are closer in conformations as their PEs are moved deeper into the PE well. © 1994 John Wiley & Sons, Inc.
    Additional Material: 6 Ill.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Chichester [u.a.] : Wiley-Blackwell
    Surface and Interface Analysis 9 (1986), S. 275-281 
    ISSN: 0142-2421
    Keywords: Chemistry ; Polymer and Materials Science
    Source: Wiley InterScience Backfile Collection 1832-2000
    Topics: Physics
    Notes: Helium ion channelling, nuclear reaction profiling and x-ray photoemission measurements of CF4/X%H2 (0≤X≤40) and CCIF3/50%H2 dry etched Si surfaces are reported. It is shown that plasma exposure of a clean Si surface leads to the deposition of a thin (∼30∼50) Å thick C,F-containing film (or C,F, C1-containing in the case of CC1F3/H2 etching). A subsurface Si carbide layer is formed during reactive ion etching. The near-surface region (∼30∼50 Å) of the Si substrate is heavily disordered as found by ion channeling. A modified, less damaged layer containing a high concentration of hydrogen is formed in the case of the H2 containing gases (as shown by nuclear reaction profillin) and extends more than 250 Å from the surface. It is found that heating the plasma exposed substrates to 400°C in dry O2 for 30 min is efficient in recovering good quality Si surfaces.
    Additional Material: 9 Ill.
    Type of Medium: Electronic Resource
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