ISSN:
1572-9559
Keywords:
Quantum Interference Transistor (QUIT)
;
quantum interference
;
MODFET
;
unity current-gain cut-off frequency (f T)
;
Aharonov-Bohm Effect
Source:
Springer Online Journal Archives 1860-2000
Topics:
Physics
Notes:
Abstract A high performance quantum interference transistor (QUIT) realized using high mobility 1-D MODFET channels is presented. The operation of this 1-D QUIT is based on electrostatic Aharonov-Bohm quantum interference effect. The channel length of the device is smaller than the inelastic coherence length of the electrons in the quantum well wire channel, otherwise scattering will randomize electron's phase and destroy the quantum interference effect. Transport characteristics of the 0.2 μm channel 1-D QUIT are calculated at 4.2 °K and compared with a two-dimensional QUIT device reported in literature. Our calculations show a significant improvement of the transconductance in one-dimensional transistors compared with its two-dimensional counterpart. The maximum frequency of operation of the 1-D QUIT is in the Tera Hertz regime, which makes it very attractive device for high frequency applications.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1023/A:1021763126173
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