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  • 1
    Electronic Resource
    Electronic Resource
    Thermal aromatization of alkylidenecyclopentenes and related hydrocarbons (1988)
    s.l. : American Chemical Society
    The @journal of organic chemistry 53 (1988), S. 4357-4363 
    Details
    ISSN: 1520-6904
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/jo00253a031
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  • 2
    Electronic Resource
    Electronic Resource
    Quantitative Static Secondary Ion Mass Spectrometry of pH Effects on Octadecylamine Monolayer Langmuir-Blodgett Films (1994)
    s.l. : American Chemical Society
    Analytical chemistry 66 (1994), S. 1032-1037 
    Details
    ISSN: 1520-6882
    Source: ACS Legacy Archives
    Topics: Chemistry and Pharmacology
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1021/ac00079a018
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  • 3
    Electronic Resource
    Electronic Resource
    Observation and prediction of first phase formation in binary Cu-metal thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 2810-2816 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: First phase formation has been determined in Cu binary thin film systems with Ti, Zr, Mg, Sb, Pd, and Pt using transmission electron microscopy and Rutherford backscattering spectrometry. CuTi, CuZr, CuMg2, Cu2Sb, Cu3Pd, and Cu3Pt are the first phases to form upon annealing the Cu/metal bilayers. The effective heat of formation model is used to predict first phase formation in 14 Cu/metal systems.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351533
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  • 4
    Electronic Resource
    Electronic Resource
    Oxidation and protection in copper and copper alloy thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2820-2827 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The oxidation kinetics of copper thin films have been studied at temperatures below 200 °C in air. The protection of copper from oxidation can be achieved by alloying copper film with Ti, Pd, Cr, or Al. The influence of the composition and microstructure to the oxidation rate has been studied. The compounds Cu3Ti, Cu3Pd, and CuAl2 are stable in the oxidation ambient. The formation of Cr-oxide, which is a passive oxide, explains the inhibition of oxidation on Cu-Cr films. Compared with the crystalline phase, the amorphous Cu65Ti35 alloy film is more oxidation resistant. A TiN layer with oxygen incorporated is more effective in preventing copper oxidation than a TiN layer without oxygen incorporated. A passivating Si3N4 layer on copper thin films can prevent copper oxidation effectively at 350 °C in oxygen ambient.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349344
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  • 5
    Electronic Resource
    Electronic Resource
    Limitations on the critical current density in Bi2Sr2CaCu2O8 films grown on MgO(001) by metalorganic deposition (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 2356-2362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study has been carried out in order to elucidate the mechanisms for low critical current densities in superconducting oxide films prepared by metalorganic deposition. Bi2Sr2CaCu2O8 films grown on MgO(001) have stoichiometric composition and exhibit limited interfacial reaction with the underlying substrates. The films have a low content of carbon and the grain boundaries are mostly clean. Rocking curve analysis shows a narrow peak, while pole figure measurements indicate a strong mosaic pattern. The films exhibit a low critical current density and the magnetic susceptibility versus temperature has a high field dependence. A substantial increase in critical current densities can be achieved when the orientations of Bi2Sr2CaCu2O8 crystallites in the a-b plane are improved.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351089
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  • 6
    Electronic Resource
    Electronic Resource
    Oxidation and reduction of copper oxide thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1020-1029 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have employed 16O(α,α)16O oxygen resonance measurement and transmission electron microscopy to study the oxidation and reduction of copper oxide thin films. The in- and out-diffusion of oxygen-induced oxygen concentration variations and microstructural changes in the films were monitored. The study of reduction was carried out by annealing CuO and Cu4O3 thin films in vacuum. Dark-field microscopic images show that isolated and large Cu2O grains emerge from the small CuO and Cu4O3 grain matrices. The growth of Cu2O grains in both CuO and Cu4O3 matrices has been measured to be linear with time, and have activation energies 1.1 and 0.7 eV, respectively. The main controlling mechanism to the discontinuous morphology of the Cu2O grain growth is the migration of the phase boundaries between the oxides induced by oxygen out-diffusion along the moving boundary. An oxygen in-diffusion study was performed by annealing Cu2O and Cu4O3 in an oxygen ambient. The CuO phase nucleates randomly and rapidly in both Cu2O and Cu4O3 matrices. The small grain growth rate of CuO suggests that nucleation rather than grain growth is the predominant event during oxidation. The kinetics study of the reduction and oxidation of copper oxides shows that the two processes are asymmetrical and the latter is faster.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347417
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  • 7
    Electronic Resource
    Electronic Resource
    In situ observation of fractal growth during a-Si crystallization in a Cu3Si matrix (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 5153-5155 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We observe that the crystallization of amorphous Si thin films in contact with a copper silicide layer occurs at a temperature of around 485 °C in the form of dendrites with a fractal dimension of 1.7. The in situ observation of both the silicidation reaction, forming Cu3Si, and the subsequent crystallization of the remaining amorphous silicon in the silicide matrix, were observed during annealing in a transmission electron microscope. We estimate the radial growth rate of these crystallites at 5 nm/s at this temperature. The fractal dimension of the dendrites indicates a growth process similar to one known as diffusion-limited aggregation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348995
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  • 8
    Electronic Resource
    Electronic Resource
    Interactions of Cu with CoSi2, CrSi2 and TiSi2 with and without TiNx barrier layers (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 6207-6212 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interactions of Cu with CoSi2, CrSi2, and TiSi2 with and without interposed TiNx layers have been studied using Rutherford backscattering spectrometry, Auger electron spectrometry, x-ray diffraction, and in situ sheet resistivity measurements. Cu diffuses through a preformed CoSi2 layer to form the structure CoSi2/Cu3Si/Si(100). No dissociation of CoSi2 has been observed. For the Cu/CrSi2/Si system, the outdiffusion of Si leads to the formation of Cu3Si/CrSi2/Si at temperatures above 300 °C. At about the same temperature, Cu diffuses into a TiSi2 layer and to the TiSi2/Si interface to react with both Ti and Si forming Cu3Ti, Cu3Si, and Cu4Si phases. A 50-nm TiNx layer prepared by reactive sputtering was observed to be an effective diffusion barrier between Cu and CoSi2 or CrSi2. A 30-nm layer of TiNx simultaneously grown with TiSi2 by rapid thermal annealing proved effective between Cu and TiSi2 up to 500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346912
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  • 9
    Electronic Resource
    Electronic Resource
    Transmission of light in ionic ferrofluid (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1128-1131 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The transmission of light through CoFe2O4 ionic aqueous ferrofluids under different magnetic fields is measured. The results show that the transmission intensity increases quickly as soon as the magnetic field is applied, and then weakens with time. Both the initial increase and following decrease of the transmission intensity are proportional to the volume fraction Φv of CoFe2O4 particles in the ferrofluid and the magnetic field strength B. Once the magnetic field is removed, the transmission intensity rises rapidly to a stable value, which is inversely proportional to the Φv and B, and is less than the value before the magnetic field was applied. These results indicate that there exists a dynamical process that the chains of magnetic particles in the ferrofluid form, join, and then break. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1481772
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  • 10
    Electronic Resource
    Electronic Resource
    Static "semi-plane-symmetric'' metrics yielded by plane-symmetric electromagnetic fields (1989)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 30 (1989), S. 2915-2917 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: The task of seeking a general static solution to the Einstein–Maxwell equations representing "semi-plane-symmetric'' metrics yielded by plane-symmetric electromagnetic fields is reduced to solving a single ordinary differential equation. A special solution is given, showing that there does exist some electrovac metric that does not share some of the symmetries of the electromagnetic fields.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.528476
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