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Digitale Medien

Analysis of arsenic range distributions in silicon (1975)

Sigmon, T. W. ; Chu, W. K. ; Müller, H. ; [weitere]

Springer

Applied physics 5 (1975), S. 347-350

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ISSN: 1432-0630

Schlagwort(e): Ion implantation ; Arsenic range ; Backscattering analysis

Quelle: Springer Online Journal Archives 1860-2000

Thema: Maschinenbau , Physik

Notizen: Abstract MeV4He ion backscattering and differential sheet resistivity measurements were made on As implants into silicon at room temperature. Analysis of backscattering measurements yields the projected rangeR p and projected standard deviation ΔR p . Over the energy range of 50 to 250 keV, the values ofR p are found to agree well with LSS theoretical predictions; however, values of ΔR p are systematically higher than theoretical calculations. Backscattering and differential sheet resistivity measurements on samples annealed at 950°C are in general agreement and indicate diffusional broadening of the profile.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1007/BF00928023

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